june.2011.version1.2 magnachipsemiconductorltd . 1 MDIS1501Csinglenchanneltrenchmosfet30v absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 30 v gatesourcevoltage v gss 20 v continuousdraincurrent (1) t c =25 o c i d 67.4 a t c =70 o c 53.9 t a =25 o c 25.1 (3) t a =70 o c 20.2 (3) pulseddraincurrent i dm 100 a powerdissipation t c =25 o c p d 44.6 w t c =70 o c 28.5 t a =25 o c 6.2 (3) t a =70 o c 4.0 (3) singlepulseavalancheenergy (2) e as 94 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 20.0 o c/w thermalresistance,junctiontocase r jc 2.8 MDIS1501 singlenchanneltrenchmosfet30v,67.4a, 5.6m features v ds =30v i d =67.4a@v gs =10v r ds(on)(max) <5.6m @v gs =10v <8.6m @v gs =4.5v 100%uiltested 100%rgtested generaldescription the MDIS1501 uses advanced magnachip s mosfet technology, which provides high performance in ons tate resistance, fast switching performance and excellen t quality. MDIS1501 is suitable device for dc to dc converterandgeneralpurposeapplications. d g s d d s g
june.2011.version1.2 magnachipsemiconductorltd . 2 MDIS1501Csinglenchanneltrenchmosfet30v orderinginformation partnumber temp.range package packing quantity ro hsstatus MDIS1501th 55~150 o c to251vs(ipak) tube 75units/tube halogenfree electricalcharacteristics(t j =25 o c) characteristics symbol testcondition min typ max u nit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 30 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.3 1.9 2.7 draincutoffcurrent i dss v ds =30v,v gs =0v 1 a t j =55 o c 5 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 drainsourceonresistance r ds(on) v gs =10v,i d =20a 4.9 5.6 m t j =125 o c 7.1 8.1 v gs =4.5v,i d =16a 7.2 8.6 forwardtransconductance g fs v ds =5v,i d =10a 35 s dynamiccharacteristics totalgatecharge q g(10v) v ds =15.0v,i d =20a, v gs =10v 15.5 20.7 25.9 nc totalgatecharge q g(4.5v) 7.6 10.1 12.6 gatesourcecharge q gs 3.7 gatedraincharge q gd 2.9 inputcapacitance c iss v ds =15.0v,v gs =0v, f=1.0mhz 1013 1350 1688 pf reversetransfercapacitance c rss 99 132 165 outputcapacitance c oss 195 261 326 turnondelaytime t d(on) v gs =10v,v ds =15.0v, i d =20a,r g =3.0 8.8 ns risetime t r 12.2 turnoffdelaytime t d(off) 29.5 falltime t f 8.6 gateresistance rg f=1mhz 1.5 3.0 drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =20a,v gs =0v 0.8 1.1 v bodydiodereverserecoverytime t rr i f =20a,dl/dt=100a/s 22.4 33.6 ns bodydiodereverserecoverycharge q rr 14.0 21.0 nc note: 1.surfacemountedfr4boardbyjedec(jesd517) 2.e as istestedatstartingtj=25 ,l=0.1mh,i as =24.0a,v dd =27v,v gs =10v. 3.t<10sec.
june.2011.version1.2 magnachipsemiconductorltd . 3 MDIS1501Csinglenchanneltrenchmosfet30v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2on resistancevariationwith draincurrentandgatevoltage fig.3on resistancevariationwith temperature fig.4on resistancevariationwith gatetosourcevoltage fig.6 body diode forward voltage variation with source current and temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 4.5v 3.5v v gs =10v 5.0v 4.0v 3.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 5 10 15 20 25 30 35 40 45 50 0 4 8 12 16 v gs =10v v gs =4.5v drainsourceonresistance[m ] i d ,draincurrent[a] 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes: 1.v gs =10v 2.i d =20.0a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 notes: i d =20.0a t a =25 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0 1 2 3 4 5 0 4 8 12 16 v gs ,gatesourcevoltage[v] t a =25 notes: v ds =5v i d ,draincurrent[a] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 1 10 0 10 1 t a =25 notes: v gs =0v i dr ,reversedraincurrent[a] v sd ,sourcedrainvoltage[v]
june.2011.version1.2 magnachipsemiconductorltd . 4 MDIS1501Csinglenchanneltrenchmosfet30v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig.10 maximum drain current v s. casetemperature fig.11 transient thermal response curve 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 i d ,draincurrent[a] t a ,casetemperature[ ] 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 10 1 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ja (t),thermalresponse t 1 ,rectangularpulseduration[sec] 0 5 10 15 20 25 30 0 300 600 900 1200 1500 1800 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 0 4 8 12 16 20 24 0 2 4 6 8 10 v ds =15v note:i d =20a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 10 1 10 0 10 1 10 2 10 1 10 0 10 1 10 2 10 3 1s 10s 100ms dc 10ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v]
june.2011.version1.2 magnachipsemiconductorltd . 5 MDIS1501Csinglenchanneltrenchmosfet30v packagedimension to251vs(ipak) dimensionsareinmillimeters,unlessotherwisespe cified disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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